• Abstract
• Full-Text PDF [756 KB]

• Article Statistics
• Google Scholar
• Order Reprints

• Cite this article
• Export to BibTeX
• Export to EndNote

• [+] on DOAJ
• Arshak, K
• Korostynska, O
• Fahim, F
• [+] on Google Scholar
• Arshak, K
• Korostynska, O
• Fahim, F
• [+] on PubMed
• Arshak, K
• Korostynska, O
• Fahim, F

•  CiteULike
•  Facebook
•  Mendeley
•  Twitter

This article is

• freely available
• re-usable

Sensors 2003, 3(6), 176-186; doi:10.3390/s30600176

Article

Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors

Khalil Arshak* , Olga Korostynska and Farah Fahim

Electronic and Computer Engineering Department, University of Limerick, Plassey Technological Park, Limerick, Ireland

* Author to whom correspondence should be addressed.

Received: 1 April 2003 / Accepted: 29 April 2003 / Published: 30 June 2003

Download PDF Full-Text [756 KB, uploaded 1 October 2008 09:01 CEST]

Abstract: Thick films Nickel oxide (NiO) in the form of pn-junctions and planar structures with interdigitated electrodes were investigated for γ-radiation dosimetry purposes. Samples were fabricated using the thick film screen-printing technique. All devices were exposed to a disc-type ¹³⁷Cs source with an activity of 370 kBq. They showed an increase in the values of current with the increase in radiation dose up to a certain level. Performance parameters of the devices, such as sensitivity to γ-radiation exposure and working dose region, were found to be highly dependant on the composition of the materials used.

Keywords: Nickel Oxide; Thick Films; Gamma Radiation; Pn-junction; Interdigitated Electrodes

Article Statistics

Cite This Article