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Sensors 2003, 3(6), 176-186; doi:10.3390/s30600176
Article

Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors

* ,  and
Electronic and Computer Engineering Department, University of Limerick, Plassey Technological Park, Limerick, Ireland
* Author to whom correspondence should be addressed.
Received: 1 April 2003 / Accepted: 29 April 2003 / Published: 30 June 2003
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Abstract

Thick films Nickel oxide (NiO) in the form of pn-junctions and planar structures with interdigitated electrodes were investigated for γ-radiation dosimetry purposes. Samples were fabricated using the thick film screen-printing technique. All devices were exposed to a disc-type 137Cs source with an activity of 370 kBq. They showed an increase in the values of current with the increase in radiation dose up to a certain level. Performance parameters of the devices, such as sensitivity to γ-radiation exposure and working dose region, were found to be highly dependant on the composition of the materials used.
Keywords: Nickel Oxide; Thick Films; Gamma Radiation; Pn-junction; Interdigitated Electrodes Nickel Oxide; Thick Films; Gamma Radiation; Pn-junction; Interdigitated Electrodes
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Arshak, K.; Korostynska, O.; Fahim, F. Various Structures Based on Nickel Oxide Thick Films as Gamma Radiation Sensors. Sensors 2003, 3, 176-186.

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