Next Article in Journal
Genotyping of KRAS Mutational Status by the In-Check Lab-on-Chip Platform
Previous Article in Journal
A New Approach to Design Autonomous Wireless Sensor Node Based on RF Energy Harvesting System
Article Menu
Issue 1 (January) cover image

Export Article

Open AccessArticle
Sensors 2018, 18(1), 138; https://doi.org/10.3390/s18010138

Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection

1
AIST-TUT Advanced Sensor Collaborative Research Laboratory, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
2
Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
3
Electronics Inspired-Interdisciplinary Research Institute (EIIRIS), Toyohashi University of Technology, Toyohashi, Aichi 441-8580, Japan
4
JST Precursory Research for Embryonic Science and Technology (PRESTO), Tokyo 102-0076, Japan
*
Author to whom correspondence should be addressed.
Received: 20 December 2017 / Revised: 1 January 2018 / Accepted: 3 January 2018 / Published: 5 January 2018
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [4339 KB, uploaded 5 January 2018]   |  

Abstract

We developed a Fabry–Perot interferometer sensor with a metal-oxide-semiconductor field-effect transistor (MOSFET) circuit for chemical sensing. The novel signal transducing technique was performed in three steps: mechanical deflection, transmittance change, and photocurrent change. A small readout photocurrent was processed by an integrated source follower circuit. The movable film of the sensor was a 350-nm-thick polychloro-para-xylylene membrane with a diameter of 100 µm and an air gap of 300 nm. The linearity of the integrated source follower circuit was obtained. We demonstrated a gas response using 80-ppm ethanol detected by small membrane deformation of 50 nm, which resulted in an output-voltage change with the proposed high-efficiency transduction. View Full-Text
Keywords: Fabry–Perot interference; microelectromechanical systems (MEMS); complementary metal oxide semiconductor (CMOS) Fabry–Perot interference; microelectromechanical systems (MEMS); complementary metal oxide semiconductor (CMOS)
Figures

Figure 1

This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
SciFeed

Share & Cite This Article

MDPI and ACS Style

Maruyama, S.; Hizawa, T.; Takahashi, K.; Sawada, K. Optical-Interferometry-Based CMOS-MEMS Sensor Transduced by Stress-Induced Nanomechanical Deflection. Sensors 2018, 18, 138.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top