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Sensors 2017, 17(3), 599; doi:10.3390/s17030599

High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor

1
Department of Mechanical and Electrical Engineering, Xiamen University, Xiamen 361005, China
2
Instrumentation Technology & Economy Institute, Beijing 100055, China
3
Pen-Tung Sah Institute of Micro-Nano Science and Technology, Xiamen University, Xiamen 361005, China
*
Authors to whom correspondence should be addressed.
Academic Editors: Mustafa Yavuz and Jianmin Miao
Received: 19 December 2016 / Revised: 20 February 2017 / Accepted: 14 March 2017 / Published: 16 March 2017
(This article belongs to the Special Issue MEMS and Nano-Sensors)
View Full-Text   |   Download PDF [7013 KB, uploaded 16 March 2017]   |  

Abstract

In order to achieve and maintain a high quality factor (high-Q) for the micro resonant pressure sensor, this paper presents a new wafer level package by adopting cross-layer anodic bonding technique of the glass/silicon/silica (GSS) stackable structure and integrated Ti getter. A double-layer structure similar to a silicon-on-insulator (SOI) wafer is formed after the resonant layer and the pressure-sensitive layer are bonded by silicon direct bonding (SDB). In order to form good bonding quality between the pressure-sensitive layer and the glass cap layer, the cross-layer anodic bonding technique is proposed for vacuum package by sputtering Aluminum (Al) on the combination wafer of the pressure-sensitive layer and the resonant layer to achieve electrical interconnection. The model and the bonding effect of this technique are discussed. In addition, in order to enhance the performance of titanium (Ti) getter, the prepared and activation parameters of Ti getter under different sputtering conditions are optimized and discussed. Based on the optimized results, the Ti getter (thickness of 300 nm to 500 nm) is also deposited on the inside of the glass groove by magnetron sputtering to maintain stable quality factor (Q). The Q test of the built testing system shows that the number of resonators with a Q value of more than 10,000 accounts for more than 73% of the total. With an interval of 1.5 years, the Q value of the samples remains almost constant. It proves the proposed cross-layer anodic bonding and getter technique can realize high-Q resonant structure for long-term stable operation. View Full-Text
Keywords: micro resonant pressure sensor; high quality factor; cross-layer anodic bonding; Ti getter; wafer level package micro resonant pressure sensor; high quality factor; cross-layer anodic bonding; Ti getter; wafer level package
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Wang, L.; Du, X.; Wang, L.; Xu, Z.; Zhang, C.; Gu, D. High-Q Wafer Level Package Based on Modified Tri-Layer Anodic Bonding and High Performance Getter and Its Evaluation for Micro Resonant Pressure Sensor. Sensors 2017, 17, 599.

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