Next Article in Journal
Non-Invasive Examination of Plant Surfaces by Opto-Electronic Means—Using Russet as a Prime Example
Next Article in Special Issue
Antenna Deployment for the Localization of Partial Discharges in Open-Air Substations
Previous Article in Journal
An Energy Aware Adaptive Sampling Algorithm for Energy Harvesting WSN with Energy Hungry Sensors
Previous Article in Special Issue
An Evaluation of Sensor Performance for Harmful Compounds by Using Photo-Induced Electron Transfer from Photosynthetic Membranes to Electrodes
Article Menu

Export Article

Open AccessArticle
Sensors 2016, 16(4), 450; doi:10.3390/s16040450

Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS

1
Minghsin University of Science and Technology, Xinfeng 30401, Taiwan
2
Treasure Giant Technology Inc., Hsinchu City 30068, Taiwan
3
Southern Taiwan University of Science and Technology, Tainan 71005, Taiwan
4
National Nano Device Laboratories, Hsinchu 30078, Taiwan
These authors contributed equally to this work.
*
Author to whom correspondence should be addressed.
Academic Editor: Alberto Vallan
Received: 3 February 2016 / Revised: 18 March 2016 / Accepted: 23 March 2016 / Published: 29 March 2016
View Full-Text   |   Download PDF [1530 KB, uploaded 29 March 2016]   |  

Abstract

Fluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future. View Full-Text
Keywords: SONOS; NVM; sensor; gamma ray SONOS; NVM; sensor; gamma ray
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Hsieh, W.-C.; Lee, H.-T.D.; Jong, F.-C.; Wu, S.-C. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS. Sensors 2016, 16, 450.

Show more citation formats Show less citations formats

Note that from the first issue of 2016, MDPI journals use article numbers instead of page numbers. See further details here.

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top