Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS
AbstractFluorine-treated titanium nitride–silicon oxide–hafnium oxide–silicon oxide–silicon devices (hereafter F-MOHOS) are candidates for total ionization dose (TID) radiation sensor applications. The main subject of the study reportedherein is the performance improvement in terms of TID radiation-induced charge generation effect and charge-retention reliability characterization for F-MOHOS devices. In the case of F-MOHOS TID radiation sensors, the gamma radiation induces a significant decrease of threshold voltage VT and the radiation-induced charge density is nearly six times larger than that of standard metal–oxide–nitride–oxide–silicon MONOS devices. The decrease of VT for F-MOHOS after gamma irradiation has a strong correlation to the TID up to 5 Mrad gamma irradiation as well. The improvement of charge retention loss for F-MOHOS devices is nearly 15% better than that of metal–oxide–hafnium oxide–oxide–silicon MOHOS devices. The F-MOHOS device described in this study demonstrates better feasibility for non-volatile TID radiation sensing in the future. View Full-Text
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Hsieh, W.-C.; Lee, H.-T.D.; Jong, F.-C.; Wu, S.-C. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS. Sensors 2016, 16, 450.
Hsieh W-C, Lee H-TD, Jong F-C, Wu S-C. Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS. Sensors. 2016; 16(4):450.Chicago/Turabian Style
Hsieh, Wen-Ching; Lee, Hao-Tien D.; Jong, Fuh-Cheng; Wu, Shich-Chuan. 2016. "Performance Improvement of Total Ionization Dose Radiation Sensor Devices Using Fluorine-Treated MOHOS." Sensors 16, no. 4: 450.
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