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Sensors 2015, 15(8), 18416-18426; doi:10.3390/s150818416

AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein

School of Electronics Engineering, Kyunpook National University, 80 Daehakro, Buk-gu, Daegu 702-701, Korea
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Academic Editor: Alexander Star
Received: 29 May 2015 / Revised: 21 July 2015 / Accepted: 24 July 2015 / Published: 28 July 2015
(This article belongs to the Section Biosensors)
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Abstract

In this paper, we propose an AlGaN/GaN high electron mobility transistor (HEMT)-based biosensor for the detection of C-reactive protein (CRP) using a null-balancing circuit. A null-balancing circuit was used to measure the output voltage of the sensor directly. The output voltage of the proposed biosensor was varied by antigen-antibody interactions on the gate surface due to CRP charges. The AlGaN/GaN HFET-based biosensor with null-balancing circuit applied shows that CRP can be detected in a wide range of concentrations, varying from 10 ng/mL to 1000 ng/mL. X-ray photoelectron spectroscopy was carried out to verify the immobilization of self-assembled monolayer with Au on the gated region. View Full-Text
Keywords: AlGaN/GaN; HEMT; CRP; biosensor; null-balancing circuit AlGaN/GaN; HEMT; CRP; biosensor; null-balancing circuit
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Lee, H.H.; Bae, M.; Jo, S.-H.; Shin, J.-K.; Son, D.H.; Won, C.-H.; Jeong, H.-M.; Lee, J.-H.; Kang, S.-W. AlGaN/GaN High Electron Mobility Transistor-Based Biosensor for the Detection of C-Reactive Protein. Sensors 2015, 15, 18416-18426.

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