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Sensors 2015, 15(6), 12700-12719; doi:10.3390/s150612700

A Programmable High-Voltage Compliance Neural Stimulator for Deep Brain Stimulation in Vivo

1
Department of Electrical Engineering, Chang Gung University, No. 259 Wen-Hwa 1st Rd., Guishan Township, Taoyuan County 333, Taiwan
2
Portable Energy System Group, Green Technology Research Center, College of Engineering, Chang Gung University, No. 259 Wen-Hwa 1st Rd., Guishan Township, Taoyuan County 333, Taiwan
3
Interdisciplinary Institute of Neuroscience and Technology, Zhejiang University, Zhouyiqing Building, Yuquan Campus, Zhejiang University, Hangzhou 310027, China
4
School of Medicine, Chang Gung University, No. 259 Wen-Hwa 1st Rd., Guishan Township, Taoyuan County 333, Taiwan
5
Department of Biomedical Engineering, National Yang Ming University, No.155, Sec.2, Linong St., Taipei 112, Taiwan
6
Center for Optoelectronic Medicine, National Taiwan University College of Medicine, No.1 Jen Ai Rd. Sec. 1. Taipei 100, Taiwan
7
Department of Bioengineering, University of California, San Diego, 9500 Gilman Drive #0412, La Jolla, CA 92093, USA
8
Department of Neurosurgery, Chang Gung University and Memorial Hospital at Linkou, No.5, Fuxing St., Guishan Township, Taoyuan County 333, Taiwan
9
Department of Biomedical Engineering, Ming-Chuan University, 5 De Ming Rd., Guishan Township, Taoyuan County 333, Taiwan
These authors contributed equally to this work.
*
Authors to whom correspondence should be addressed.
Academic Editor: Vittorio M.N. Passaro
Received: 1 December 2014 / Revised: 8 May 2015 / Accepted: 21 May 2015 / Published: 28 May 2015
(This article belongs to the Section Physical Sensors)
View Full-Text   |   Download PDF [3143 KB, uploaded 28 May 2015]   |  

Abstract

Deep brain stimulation (DBS) is one of the most effective therapies for movement and other disorders. The DBS neurosurgical procedure involves the implantation of a DBS device and a battery-operated neurotransmitter, which delivers electrical impulses to treatment targets through implanted electrodes. The DBS modulates the neuronal activities in the brain nucleus for improving physiological responses as long as an electric discharge above the stimulation threshold can be achieved. In an effort to improve the performance of an implanted DBS device, the device size, implementation cost, and power efficiency are among the most important DBS device design aspects. This study aims to present preliminary research results of an efficient stimulator, with emphasis on conversion efficiency. The prototype stimulator features high-voltage compliance, implemented with only a standard semiconductor process, without the use of extra masks in the foundry through our proposed circuit structure. The results of animal experiments, including evaluation of evoked responses induced by thalamic electrical stimuli with our fabricated chip, were shown to demonstrate the proof of concept of our design. View Full-Text
Keywords: deep brain stimulation (DBS); complementary metal-oxide-semiconductor (CMOS); high-voltage compliance neural stimulator deep brain stimulation (DBS); complementary metal-oxide-semiconductor (CMOS); high-voltage compliance neural stimulator
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Gong, C.-S.A.; Lai, H.-Y.; Huang, S.-H.; Lo, Y.-C.; Lee, N.; Chen, P.-Y.; Tu, P.-H.; Yang, C.-Y.; Lin, J.C.-C.; Chen, Y.-Y. A Programmable High-Voltage Compliance Neural Stimulator for Deep Brain Stimulation in Vivo. Sensors 2015, 15, 12700-12719.

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