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Sensors 2014, 14(9), 16869-16880; doi:10.3390/s140916869

A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position

1
Dipartimento di Chimica Università degli Studi di Bari Aldo Moro, Via Orabona 4, 70126 Bari, Italy
2
CNR-IFN and Dipartimento Interateneo di Fisica, Università degli Studi di Bari "A. Moro"-Via Orabona 4, 70126 Bari, Italy
*
Author to whom correspondence should be addressed.
Received: 2 July 2014 / Revised: 11 August 2014 / Accepted: 2 September 2014 / Published: 11 September 2014
(This article belongs to the Special Issue Gas Sensors Based on the Field Effect)
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Abstract

Bottom- and top-contact organic thin film transistors (OTFTs) were fabricated, using poly(3-hexylthiophene-2,5-diyl) (P3HT) and poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT-C16) as p-type channel semiconductors. Four different types of OTFTs were fabricated and investigated as gas sensors against three volatile organic compounds, with different associated dipole moments. The OTFT-based sensor responses were evaluated with static and transient current measurements. A comparison between the different architectures and the relative organic semiconductor was made. View Full-Text
Keywords: organic thin film transistors; chemical sensors; volatile organic compounds organic thin film transistors; chemical sensors; volatile organic compounds
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Manoli, K.; Dumitru, L.M.; Mulla, M.Y.; Magliulo, M.; Franco, C.D.; Santacroce, M.V.; Scamarcio, G.; Torsi, L. A Comparative Study of the Gas Sensing Behavior in P3HT- and PBTTT-Based OTFTs: The Influence of Film Morphology and Contact Electrode Position. Sensors 2014, 14, 16869-16880.

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