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Sensors 2014, 14(12), 22773-22784; doi:10.3390/s141222773

Design, Characterization and Analysis of a 0.35 μm CMOS SPAD

Laboratory Electronique, Informatique et Image, Le2i UMR CNRS 6306, Aile de l'ingénieur-9, Avenue Alain Savary-BP 47870, Dijon Cedex 21078, France
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Received: 10 October 2014 / Revised: 14 November 2014 / Accepted: 17 November 2014 / Published: 1 December 2014
(This article belongs to the Section Physical Sensors)
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Abstract

Most of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD. View Full-Text
Keywords: etectors; avalanche photodiodes (APDs); optoelectronics; photonic integrated circuit; integrated optoelectronic circuits etectors; avalanche photodiodes (APDs); optoelectronics; photonic integrated circuit; integrated optoelectronic circuits
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Jradi, K.; Pellion, D.; Ginhac, D. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD. Sensors 2014, 14, 22773-22784.

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