Design, Characterization and Analysis of a 0.35 μm CMOS SPAD
AbstractMost of the works about single-photon detectors rely on Single Photon Avalanche Diodes (SPADs) designed with dedicated technological processes in order to achieve single-photon sensitivity and excellent timing resolution. Instead, this paper focuses on the implementation of high-performance SPADs detectors manufactured in a standard 0.35-micron opto-CMOS technology provided by AMS. We propose a series of low-noise SPADs designed with a variable pitch from 20 µm down to 5 µm. This opens the further way to the integration of large arrays of optimized SPAD pixels with pitch of a few micrometers in order to provide high-resolution single-photon imagers. We experimentally demonstrate that a 20-micron SPAD appears as the most relevant detector in terms of Signal-to-Noise ratio, enabling emergence of large arrays of SPAD. View Full-Text
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Jradi, K.; Pellion, D.; Ginhac, D. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD. Sensors 2014, 14, 22773-22784.
Jradi K, Pellion D, Ginhac D. Design, Characterization and Analysis of a 0.35 μm CMOS SPAD. Sensors. 2014; 14(12):22773-22784.Chicago/Turabian Style
Jradi, Khalil; Pellion, Denis; Ginhac, Dominique. 2014. "Design, Characterization and Analysis of a 0.35 μm CMOS SPAD." Sensors 14, no. 12: 22773-22784.