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Sensors 2013, 13(10), 13575-13583; doi:10.3390/s131013575
Article

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

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Received: 1 August 2013 / Revised: 10 September 2013 / Accepted: 30 September 2013 / Published: 9 October 2013
(This article belongs to the Special Issue Gas Sensors - 2013)
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Abstract

We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
Keywords: hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Kim, S.; Choi, J.; Jung, M.; Joo, S.; Kim, S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors 2013, 13, 13575-13583.

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