Next Article in Journal
Design and Development of a Low-Cost Optical Current Sensor
Next Article in Special Issue
TiO2 Nanotubes: Recent Advances in Synthesis and Gas Sensing Properties
Previous Article in Journal
Thermal Tracking in Mobile Robots for Leak Inspection Activities
Previous Article in Special Issue
Harmful Gas Recognition Exploiting a CTL Sensor Array
Article Menu

Export Article

Open AccessArticle
Sensors 2013, 13(10), 13575-13583; doi:10.3390/s131013575

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

Department of Computer Engineering, Kyungnam University, Changwon 631-701, Korea
Creative Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 642-120, Korea
Author to whom correspondence should be addressed.
Received: 1 August 2013 / Revised: 10 September 2013 / Accepted: 30 September 2013 / Published: 9 October 2013
(This article belongs to the Special Issue Gas Sensors - 2013)
View Full-Text   |   Download PDF [350 KB, 21 June 2014; original version 21 June 2014]   |  


We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
Keywords: hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Kim, S.; Choi, J.; Jung, M.; Joo, S.; Kim, S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors 2013, 13, 13575-13583.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics



[Return to top]
Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top