Sensors 2013, 13(10), 13575-13583; doi:10.3390/s131013575

Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications

1 Department of Computer Engineering, Kyungnam University, Changwon 631-701, Korea 2 Creative Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 642-120, Korea
* Author to whom correspondence should be addressed.
Received: 1 August 2013; in revised form: 10 September 2013 / Accepted: 30 September 2013 / Published: 9 October 2013
(This article belongs to the Special Issue Gas Sensors - 2013)
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Abstract: We investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
Keywords: hydrogen sensor; high temperature; SiC; Ta2O5; MIS structure

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MDPI and ACS Style

Kim, S.; Choi, J.; Jung, M.; Joo, S.; Kim, S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors 2013, 13, 13575-13583.

AMA Style

Kim S, Choi J, Jung M, Joo S, Kim S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors. 2013; 13(10):13575-13583.

Chicago/Turabian Style

Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel. 2013. "Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications." Sensors 13, no. 10: 13575-13583.

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