Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications
AbstractWe investigated SiC-based hydrogen gas sensors with metal-insulator-semiconductor (MIS) structure for high temperature process monitoring and leak detection applications in fields such as the automotive, chemical and petroleum industries. In this work, a thin tantalum oxide (Ta2O5) layer was exploited with the purpose of sensitivity improvement, because tantalum oxide has good stability at high temperature with high permeability for hydrogen gas. Silicon carbide (SiC) was used as a substrate for high-temperature applications. We fabricated Pd/Ta2O5/SiC-based hydrogen gas sensors, and the dependence of their I-V characteristics and capacitance response properties on hydrogen concentrations were analyzed in the temperature range from room temperature to 500 °C. According to the results, our sensor shows promising performance for hydrogen gas detection at high temperatures.
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Kim, S.; Choi, J.; Jung, M.; Joo, S.; Kim, S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors 2013, 13, 13575-13583.
Kim S, Choi J, Jung M, Joo S, Kim S. Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications. Sensors. 2013; 13(10):13575-13583.Chicago/Turabian Style
Kim, Seongjeen; Choi, Jehoon; Jung, Minsoo; Joo, Sungjae; Kim, Sangchoel. 2013. "Silicon Carbide-Based Hydrogen Gas Sensors for High-Temperature Applications." Sensors 13, no. 10: 13575-13583.