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Sensors 2013, 13(10), 12744-12759; doi:10.3390/s131012744

Tip-Enhanced Raman Imaging and Nano Spectroscopy of Etched Silicon Nanowires

Department of Chemistry and Centre for Advanced Materials and Biomaterials, University of Western Ontario, 1151 Richmond Street, London, N6A 5B7, Canada
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Received: 2 August 2013 / Accepted: 12 September 2013 / Published: 25 September 2013
(This article belongs to the Special Issue Spectral Imaging at the Microscale and Beyond)
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Abstract

Tip-enhanced Raman spectroscopy (TERS) is used to investigate the influence of strains in isolated and overlapping silicon nanowires prepared by chemical etching of a (100) silicon wafer. An atomic force microscopy tip made of nanocrystalline diamond coated with a thin layer of silver is used in conjunction with an excitation wavelength of 532 nm in order to probe the first order optical phonon mode of the [100] silicon nanowires. The frequency shift and the broadening of the silicon first order phonon are analyzed and compared to the topographical measurements for distinct configuration of nanowires that are disposed in straight, bent or overlapping configuration over a microscope coverslip. The TERS spatial resolution is close to the topography provided by the nanocrystalline diamond tip and subtle spectral changes are observed for different nanowire configurations.
Keywords: tip-enhanced Raman spectroscopy; atomic force microscopy; silicon nanowires; strain/stress-induced broadening tip-enhanced Raman spectroscopy; atomic force microscopy; silicon nanowires; strain/stress-induced broadening
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This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Kazemi-Zanjani, N.; Kergrene, E.; Liu, L.; Sham, T.-K.; Lagugné-Labarthet, F. Tip-Enhanced Raman Imaging and Nano Spectroscopy of Etched Silicon Nanowires. Sensors 2013, 13, 12744-12759.

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