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Sensors 2012, 12(3), 3578-3586;

Electrical Characterization of Gold-DNA-Gold Structures in Presence of an External Magnetic Field by Means of I-V Curve Analysis

Low Dimensional Materials Research Centre, Department of Physics, University of Malaya, 50603, Kuala Lumpur, Malaysia
Authors to whom correspondence should be addressed.
Received: 21 January 2012 / Revised: 1 March 2012 / Accepted: 3 March 2012 / Published: 14 March 2012
(This article belongs to the Special Issue Nano-Biosensors)
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This work presents an experimental study of gold-DNA-gold structures in the presence and absence of external magnetic fields with strengths less than 1,200.00 mT. The DNA strands, extracted by standard method were used to fabricate a Metal-DNA-Metal (MDM) structure. Its electric behavior when subjected to a magnetic field was studied through its current-voltage (I-V) curve. Acquisition of the I-V curve demonstrated that DNA as a semiconductor exhibits diode behavior in the MDM structure. The current versus magnetic field strength followed a decreasing trend because of a diminished mobility in the presence of a low magnetic field. This made clear that an externally imposed magnetic field would boost resistance of the MDM structure up to 1,000.00 mT and for higher magnetic field strengths we can observe an increase in potential barrier in MDM junction. The magnetic sensitivity indicates the promise of using MDM structures as potential magnetic sensors. View Full-Text
Keywords: Metal-DNA-Metal (MDM); magnetic field; magnetic sensor; Schottky diode Metal-DNA-Metal (MDM); magnetic field; magnetic sensor; Schottky diode
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Khatir, N.M.; Banihashemian, S.M.; Periasamy, V.; Ritikos, R.; Majid, W.H.A.; Rahman, S.A. Electrical Characterization of Gold-DNA-Gold Structures in Presence of an External Magnetic Field by Means of I-V Curve Analysis. Sensors 2012, 12, 3578-3586.

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