Enhanced Responsivity of Photodetectors Realized via Impact Ionization
AbstractTo increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors. View Full-Text
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Yu, J.; Shan, C.-X.; Qiao, Q.; Xie, X.-H.; Wang, S.-P.; Zhang, Z.-Z.; Shen, D.-Z. Enhanced Responsivity of Photodetectors Realized via Impact Ionization. Sensors 2012, 12, 1280-1287.
Yu J, Shan C-X, Qiao Q, Xie X-H, Wang S-P, Zhang Z-Z, Shen D-Z. Enhanced Responsivity of Photodetectors Realized via Impact Ionization. Sensors. 2012; 12(2):1280-1287.Chicago/Turabian Style
Yu, Ji; Shan, Chong-Xin; Qiao, Qian; Xie, Xiu-Hua; Wang, Shuang-Peng; Zhang, Zhen-Zhong; Shen, De-Zhen. 2012. "Enhanced Responsivity of Photodetectors Realized via Impact Ionization." Sensors 12, no. 2: 1280-1287.