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Sensors 2012, 12(2), 1280-1287; https://doi.org/10.3390/s120201280

Enhanced Responsivity of Photodetectors Realized via Impact Ionization

1
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
2
Graduate University of the Chinese Academy of Sciences, Beijing 100049, China
*
Author to whom correspondence should be addressed.
Received: 20 December 2011 / Revised: 14 January 2012 / Accepted: 17 January 2012 / Published: 31 January 2012
(This article belongs to the Section Physical Sensors)
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Abstract

To increase the responsivity is one of the vital issues for a photodetector. By employing ZnO as a representative material of ultraviolet photodetectors and Si as a representative material of visible photodetectors, an impact ionization process, in which additional carriers can be generated in an insulating layer at a relatively large electric field, has been employed to increase the responsivity of a semiconductor photodetector. It is found that the responsivity of the photodetectors can be enhanced by tens of times via this impact ionization process. The results reported in this paper provide a general route to enhance the responsivity of a photodetector, thus may represent a step towards high-performance photodetectors. View Full-Text
Keywords: photodetector; responsivity; impact ionization photodetector; responsivity; impact ionization
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Yu, J.; Shan, C.-X.; Qiao, Q.; Xie, X.-H.; Wang, S.-P.; Zhang, Z.-Z.; Shen, D.-Z. Enhanced Responsivity of Photodetectors Realized via Impact Ionization. Sensors 2012, 12, 1280-1287.

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