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Self-Calibrated Humidity Sensor in CMOS without Post-Processing
Maenaka Human-sensing Fusion Project, 8111, Shosha 2167, Himeji-shi, Hyogo-ken, Japan
Hyogo Prefectural University, 8111, Shosha 2167, Himeji-shi, Hyogo-ken, Japan
* Author to whom correspondence should be addressed.
Received: 30 November 2011; in revised form: 22 December 2011 / Accepted: 27 December 2011 / Published: 27 December 2011
Abstract: A 1.1 µW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
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Cite This Article
MDPI and ACS Style
Nizhnik, O.; Higuchi, K.; Maenaka, K. Self-Calibrated Humidity Sensor in CMOS without Post-Processing. Sensors 2012, 12, 226-232.
Nizhnik O, Higuchi K, Maenaka K. Self-Calibrated Humidity Sensor in CMOS without Post-Processing. Sensors. 2012; 12(1):226-232.
Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke. 2012. "Self-Calibrated Humidity Sensor in CMOS without Post-Processing." Sensors 12, no. 1: 226-232.