Sensors 2012, 12(1), 226-232; doi:10.3390/s120100226
Article

Self-Calibrated Humidity Sensor in CMOS without Post-Processing

1,* email, 1email and 2email
Received: 30 November 2011; in revised form: 22 December 2011 / Accepted: 27 December 2011 / Published: 27 December 2011
(This article belongs to the Section Physical Sensors)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: A 1.1 µW power dissipation, voltage-output humidity sensor with 10% relative humidity accuracy was developed in the LFoundry 0.15 µm CMOS technology without post-processing. The sensor consists of a woven lateral array of electrodes implemented in CMOS top metal, a humidity-sensitive layer of Intervia Photodielectric 8023D-10, a CMOS capacitance to voltage converter, and the self-calibration circuitry.
Keywords: capacitive sensors; microsensors; humidity measurement; CMOS integrated circuits
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MDPI and ACS Style

Nizhnik, O.; Higuchi, K.; Maenaka, K. Self-Calibrated Humidity Sensor in CMOS without Post-Processing. Sensors 2012, 12, 226-232.

AMA Style

Nizhnik O, Higuchi K, Maenaka K. Self-Calibrated Humidity Sensor in CMOS without Post-Processing. Sensors. 2012; 12(1):226-232.

Chicago/Turabian Style

Nizhnik, Oleg; Higuchi, Kohei; Maenaka, Kazusuke. 2012. "Self-Calibrated Humidity Sensor in CMOS without Post-Processing." Sensors 12, no. 1: 226-232.

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