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Sensors 2011, 11(5), 5215-5228; doi:10.3390/s110505215

Modeling of Beams’ Multiple-Contact Mode with an Application in the Design of a High-g Threshold Microaccelerometer

*  and *
Key Laboratory for Thin Film and Microfabrication of Ministry of Education, National Key Laboratory of Nano/Micro Fabrication Technology, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiao Tong University, Shanghai, 200240, China
* Authors to whom correspondence should be addressed.
Received: 25 January 2011 / Revised: 30 March 2011 / Accepted: 26 April 2011 / Published: 11 May 2011
(This article belongs to the Section Physical Sensors)
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Beam’s multiple-contact mode, characterized by multiple and discrete contact regions, non-uniform stoppers’ heights, irregular contact sequence, seesaw-like effect, indirect interaction between different stoppers, and  complex coupling relationship between loads and deformation is studied. A novel analysis method and a novel high speed calculation model are developed for multiple-contact mode under mechanical load and electrostatic load, without limitations on stopper height and distribution, providing the beam has stepped or curved shape. Accurate values of deflection, contact load, contact region and so on are obtained directly, with a subsequent validation by CoventorWare. A new concept design of high-g threshold microaccelerometer based on multiple-contact mode is presented, featuring multiple acceleration thresholds of one sensitive component and consequently small sensor size.
Keywords: multiple-contact mode; beam; high-g; threshold microaccelerometer multiple-contact mode; beam; high-g; threshold microaccelerometer
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Li, K.; Chen, W.; Zhang, W. Modeling of Beams’ Multiple-Contact Mode with an Application in the Design of a High-g Threshold Microaccelerometer. Sensors 2011, 11, 5215-5228.

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