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Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors
Dipartimento di Ingegneria Strutturale, Politecnico di Milano, Piazza L. da Vinci 32, 20133 Milano, Italy
MH Division, STMicroelectronics, Via Tolomeo 1, 20010 Cornaredo, Italy
Current address: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
* Author to whom correspondence should be addressed.
Received: 15 March 2011; in revised form: 28 April 2011 / Accepted: 3 May 2011 / Published: 4 May 2011
Abstract: In this paper, an industrially-oriented two-scale approach is provided to model the drop-induced brittle failure of polysilicon MEMS sensors. The two length-scales here investigated are the package (macroscopic) and the sensor (mesoscopic) ones. Issues related to the polysilicon morphology at the micro-scale are disregarded; an upscaled homogenized constitutive law, able to describe the brittle cracking of silicon, is instead adopted at the meso-scale. The two-scale approach is validated against full three-scale Monte-Carlo simulations, which allow for stochastic effects linked to the microstructural properties of polysilicon. Focusing on inertial MEMS sensors exposed to drops, it is shown that the offered approach matches well the experimentally observed failure mechanisms.
Keywords: polysilicon MEMS; drops and shocks; brittle cracking; multi-scale simulations; finite element analysis
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MDPI and ACS Style
Mariani, S.; Ghisi, A.; Corigliano, A.; Martini, R.; Simoni, B. Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors. Sensors 2011, 11, 4972-4989.
Mariani S, Ghisi A, Corigliano A, Martini R, Simoni B. Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors. Sensors. 2011; 11(5):4972-4989.
Mariani, Stefano; Ghisi, Aldo; Corigliano, Alberto; Martini, Roberto; Simoni, Barbara. 2011. "Two-Scale Simulation of Drop-Induced Failure of Polysilicon MEMS Sensors." Sensors 11, no. 5: 4972-4989.