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Sensors 2011, 11(2), 1321-1327; doi:10.3390/s110201321

Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption

Electrical and Computer Engineering Division, Hanyang Institute of Technology, Hanyang University, 17 Haengdang-dong, Sung-dong-gu, 133-791 Seoul, Korea
Author to whom correspondence should be addressed.
Received: 20 December 2010 / Revised: 13 January 2011 / Accepted: 21 January 2011 / Published: 25 January 2011
(This article belongs to the Section Physical Sensors)
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A new method of using photo-electromotive force in detecting gas and controlling sensitivity is proposed. Photo-electromotive force on the heterojunction between porous silicon thin layer and crystalline silicon wafer depends on the concentration of ammonia in the measurement chamber. A porous silicon thin layer was formed by electrochemical etching on p-type silicon wafer. A gas and light transparent electrical contact was manufactured to this porous layer. Photo-EMF sensitivity corresponding to ammonia concentration in the range from 10 ppm to 1,000 ppm can be maximized by controlling the intensity of illumination light. View Full-Text
Keywords: gas sensors; porous silicon; heterojunction; photo-EMF gas sensors; porous silicon; heterojunction; photo-EMF

This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).

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MDPI and ACS Style

Vashpanov, Y.; Jung, J.I.; Kwack, K.D. Photo-EMF Sensitivity of Porous Silicon Thin Layer–Crystalline Silicon Heterojunction to Ammonia Adsorption. Sensors 2011, 11, 1321-1327.

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