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Sensors 2011, 11(12), 11112-11121; doi:10.3390/s111211112

A Zinc Oxide Nanorod Ammonia Microsensor Integrated with a Readout Circuit on-a-Chip

1,*  and 2
1 Department of Mechanical Engineering, National Chung Hsing University, Taichung 402, Taiwan 2 Department of Mechanical and Electro-Mechanical Engineering, Tamkang University, Tamsui 251, Taiwan
* Author to whom correspondence should be addressed.
Received: 13 October 2011 / Revised: 22 November 2011 / Accepted: 23 November 2011 / Published: 28 November 2011
(This article belongs to the Special Issue Modeling, Testing and Reliability Issues in MEMS Engineering 2011)
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A zinc oxide nanorod ammonia microsensor integrated with a readout circuit on-a-chip fabricated using the commercial 0.35 mm complementary metal oxide semiconductor (CMOS) process was investigated. The structure of the ammonia sensor is composed of a sensitive film and polysilicon electrodes. The ammonia sensor requires a post-process to etch the sacrificial layer, and to coat the sensitive film on the polysilicon electrodes. The sensitive film that is prepared by a hydrothermal method is made of zinc oxide. The sensor resistance changes when the sensitive film adsorbs or desorbs ammonia gas. The readout circuit is used to convert the sensor resistance into the voltage output. Experiments show that the ammonia sensor has a sensitivity of about 1.5 mV/ppm at room temperature.
Keywords: ammonia microsensor; zinc oxide film; nanorod; readout circuit ammonia microsensor; zinc oxide film; nanorod; readout circuit
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Yang, M.-Z.; Dai, C.-L.; Wu, C.-C. A Zinc Oxide Nanorod Ammonia Microsensor Integrated with a Readout Circuit on-a-Chip. Sensors 2011, 11, 11112-11121.

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