Sensors 2010, 10(9), 8411-8423; doi:10.3390/s100908411

Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range

1,2,* email and 2email
Received: 29 July 2010; in revised form: 13 August 2010 / Accepted: 31 August 2010 / Published: 8 September 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: We have developed novel single-photon detectors in the 10–50 μm wavelength region. The detectors are charge-sensitive infrared phototransistors (CSIPs) fabricated in GaAs/AlGaAs double quantum well (QW) structures, in which a photo-generated hole (+e) in the floating gate (upper QW) modulates the conductance of a capacitively-coupled channel located underneath (lower QW). The excellent noise equivalent power (NEP = 8.3 × 10−19 W/Hz1/2) and specific detectivity (D* = 8 × 1014 cm Hz1/2/W) are demonstrated for 15 micron detection up to 23 K, which are by a few orders of magnitude better than those of other state-of-the-art high-sensitivity detectors. The dynamic range exceeds 106 (~aW to pW) by repeatedly resetting the accumulated holes in the upper QW. Simple device structure makes the detectors feasible for array fabrication: Furthermore, monolithic integration with reading circuits will be possible.
Keywords: terahertz detector; far-infrared detector; ultra-sensitive detector; photon-counter; single-photon detector; charge-sensitive infrared phototransistor (CSIP)
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MDPI and ACS Style

Ueda, T.; Komiyama, S. Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range. Sensors 2010, 10, 8411-8423.

AMA Style

Ueda T, Komiyama S. Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range. Sensors. 2010; 10(9):8411-8423.

Chicago/Turabian Style

Ueda, Takeji; Komiyama, Susumu. 2010. "Novel Ultra-Sensitive Detectors in the 10–50 μm Wavelength Range." Sensors 10, no. 9: 8411-8423.

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