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Real-Time Plasma Process Condition Sensing and Abnormal Process Detection
Department of Power Mechanical Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
* Author to whom correspondence should be addressed.
Received: 25 April 2010; in revised form: 15 May 2010 / Accepted: 25 May 2010 / Published: 8 June 2010
Abstract: The plasma process is often used in the fabrication of semiconductor wafers. However, due to the lack of real-time etching control, this may result in some unacceptable process performances and thus leads to significant waste and lower wafer yield. In order to maximize the product wafer yield, a timely and accurately process fault or abnormal detection in a plasma reactor is needed. Optical emission spectroscopy (OES) is one of the most frequently used metrologies in in-situ process monitoring. Even though OES has the advantage of non-invasiveness, it is required to provide a huge amount of information. As a result, the data analysis of OES becomes a big challenge. To accomplish real-time detection, this work employed the sigma matching method technique, which is the time series of OES full spectrum intensity. First, the response model of a healthy plasma spectrum was developed. Then, we defined a matching rate as an indictor for comparing the difference between the tested wafers response and the health sigma model. The experimental results showed that this proposal method can detect process faults in real-time, even in plasma etching tools.
Keywords: process/equipment fault detection; spectrum; optic emission spectrum
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MDPI and ACS Style
Yang, R.; Chen, R. Real-Time Plasma Process Condition Sensing and Abnormal Process Detection. Sensors 2010, 10, 5703-5723.
Yang R, Chen R. Real-Time Plasma Process Condition Sensing and Abnormal Process Detection. Sensors. 2010; 10(6):5703-5723.
Yang, Ryan; Chen, Rongshun. 2010. "Real-Time Plasma Process Condition Sensing and Abnormal Process Detection." Sensors 10, no. 6: 5703-5723.