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Sensors 2010, 10(4), 3857-3867; doi:10.3390/s100403857

Carbon Nanotube Integration with a CMOS Process

1,* , 2
1 Grupo MEMS, Comision Nacional de Energia Atomica, San Martin 1650, Buenos Aires, Argentina 2 School of Chemical, Biological and Materials Engineering, University of Oklahoma, Norman, OK 73019, USA 3 Departamento de Ingenieria Electrica y de Computadoras, Universidad Nacional del Sur, Bahia Blanca B8000FTN, Argentina 4 INTEMA Facultad de Ingenieria, Universidad Nacional de Mar del Plata, Mar del Plata B7608FDQ, Argentina
* Author to whom correspondence should be addressed.
Received: 27 January 2010 / Revised: 6 April 2010 / Accepted: 9 April 2010 / Published: 15 April 2010
(This article belongs to the Special Issue Advances in Transducers)
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This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.
Keywords: carbon nanotube sensor; CMOS integration; microchip sensor; SWCNT carbon nanotube sensor; CMOS integration; microchip sensor; SWCNT
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Perez, M.S.; Lerner, B.; Resasco, D.E.; Obregon, P.D.P.; Julian, P.M.; Mandolesi, P.S.; Buffa, F.A.; Boselli, A.; Lamagna, A. Carbon Nanotube Integration with a CMOS Process. Sensors 2010, 10, 3857-3867.

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