Sensors 2010, 10(4), 3857-3867; doi:10.3390/s100403857
Article

Carbon Nanotube Integration with a CMOS Process

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Received: 27 January 2010; in revised form: 6 April 2010 / Accepted: 9 April 2010 / Published: 15 April 2010
(This article belongs to the Special Issue Advances in Transducers)
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.
Abstract: This work shows the integration of a sensor based on carbon nanotubes using CMOS technology. A chip sensor (CS) was designed and manufactured using a 0.30 μm CMOS process, leaving a free window on the passivation layer that allowed the deposition of SWCNTs over the electrodes. We successfully investigated with the CS the effect of humidity and temperature on the electrical transport properties of SWCNTs. The possibility of a large scale integration of SWCNTs with CMOS process opens a new route in the design of more efficient, low cost sensors with high reproducibility in their manufacture.
Keywords: carbon nanotube sensor; CMOS integration; microchip sensor; SWCNT
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MDPI and ACS Style

Perez, M.S.; Lerner, B.; Resasco, D.E.; Obregon, P.D.P.; Julian, P.M.; Mandolesi, P.S.; Buffa, F.A.; Boselli, A.; Lamagna, A. Carbon Nanotube Integration with a CMOS Process. Sensors 2010, 10, 3857-3867.

AMA Style

Perez MS, Lerner B, Resasco DE, Obregon PDP, Julian PM, Mandolesi PS, Buffa FA, Boselli A, Lamagna A. Carbon Nanotube Integration with a CMOS Process. Sensors. 2010; 10(4):3857-3867.

Chicago/Turabian Style

Perez, Maximiliano S.; Lerner, Betiana; Resasco, Daniel E.; Obregon, Pablo D. Pareja; Julian, Pedro M.; Mandolesi, Pablo S.; Buffa, Fabian A.; Boselli, Alfredo; Lamagna, Alberto. 2010. "Carbon Nanotube Integration with a CMOS Process." Sensors 10, no. 4: 3857-3867.

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