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Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection
Department of Electronic Engineering/National Taiwan University of Science and Technology, No. 43, Sec. 4, Keelung Rd. Taipei, Taiwan
Received: 28 September 2010; in revised form: 28 October 2010 / Accepted: 24 November 2010 / Published: 2 December 2010
Abstract: To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520–1,550 nm wavelength range and the pass band was 1 nm at the −1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 27-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation.
Keywords: waveguides; photodetectors; echelle grating
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MDPI and ACS Style
Hsu, S.-H. Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection. Sensors 2010, 10, 10863-10875.
Hsu S-H. Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection. Sensors. 2010; 10(12):10863-10875.
Hsu, Shih-Hsiang. 2010. "Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection." Sensors 10, no. 12: 10863-10875.