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Sensors 2010, 10(10), 9118-9126; doi:10.3390/s101009118
Article

Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate

1
, 1
 and 1,2,*
Received: 29 July 2010; in revised form: 8 September 2010 / Accepted: 19 September 2010 / Published: 12 October 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
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Abstract: In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.
Keywords: pn heterojunction photodiode; FET; optical sensor; plastic substrate; nanowire pn heterojunction photodiode; FET; optical sensor; plastic substrate; nanowire
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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MDPI and ACS Style

Kwak, K.; Cho, K.; Kim, S. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate. Sensors 2010, 10, 9118-9126.

AMA Style

Kwak K, Cho K, Kim S. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate. Sensors. 2010; 10(10):9118-9126.

Chicago/Turabian Style

Kwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig. 2010. "Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate." Sensors 10, no. 10: 9118-9126.


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