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Sensors 2010, 10(10), 9118-9126; doi:10.3390/s101009118
Article
Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
1
Department of Electrical Engineering, Korea University, Seoul 136-713, Korea
2
Department of Nano Semiconductor Engineering, Korea University, Seoul 136-713, Korea
* Author to whom correspondence should be addressed.
Received: 29 July 2010; in revised form: 8 September 2010 / Accepted: 19 September 2010 / Published: 12 October 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
Download PDF Full-Text [689 KB, uploaded 12 October 2010 12:10 CEST]
Abstract: In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter’s photocurrent efficiency by adjusting the gate voltage of the FET. When the FET is switched on by biasing a gate voltage of −9 V, the photocurrent efficiency of the photodiode is three times higher than that when the FET is switched off by biasing a gate voltage of 0 V.
Keywords: pn heterojunction photodiode; FET; optical sensor; plastic substrate; nanowire
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MDPI and ACS Style
Kwak, K.; Cho, K.; Kim, S. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate. Sensors 2010, 10, 9118-9126.
AMA StyleKwak K, Cho K, Kim S. Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate. Sensors. 2010; 10(10):9118-9126.
Chicago/Turabian StyleKwak, Kiyeol; Cho, Kyoungah; Kim, Sangsig. 2010. "Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate." Sensors 10, no. 10: 9118-9126.