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Sensors 2010, 10(10), 8797-8826; doi:10.3390/s101008797
Review

Metal-Insulator-Semiconductor Photodetectors

1
 and
2,*
1 Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan 2 Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
* Author to whom correspondence should be addressed.
Received: 5 August 2010 / Revised: 7 September 2010 / Accepted: 14 September 2010 / Published: 28 September 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)

Abstract

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
Keywords: MIS; metal-insulator-semiconductor; photodetector MIS; metal-insulator-semiconductor; photodetector
This is an open access article distributed under the Creative Commons Attribution License (CC BY 3.0).
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Lin, C.-H.; Liu, C.W. Metal-Insulator-Semiconductor Photodetectors. Sensors 2010, 10, 8797-8826.

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