AbstractThe major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
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Lin, C.-H.; Liu, C.W. Metal-Insulator-Semiconductor Photodetectors. Sensors 2010, 10, 8797-8826.
Lin C-H, Liu CW. Metal-Insulator-Semiconductor Photodetectors. Sensors. 2010; 10(10):8797-8826.Chicago/Turabian Style
Lin, Chu-Hsuan; Liu, Chee Wee. 2010. "Metal-Insulator-Semiconductor Photodetectors." Sensors 10, no. 10: 8797-8826.