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Institute of Opto-Electronic Engineering, National Dong Hwa University, Hualien 97401, Taiwan
Department of Electrical Engineering, Graduate Institute of Electronics Engineering, and Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei 10617, Taiwan
* Author to whom correspondence should be addressed.
Received: 5 August 2010; in revised form: 7 September 2010 / Accepted: 14 September 2010 / Published: 28 September 2010
Abstract: The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
Keywords: MIS; metal-insulator-semiconductor; photodetector
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Cite This Article
MDPI and ACS Style
Lin, C.-H.; Liu, C.W. Metal-Insulator-Semiconductor Photodetectors. Sensors 2010, 10, 8797-8826.
Lin C-H, Liu CW. Metal-Insulator-Semiconductor Photodetectors. Sensors. 2010; 10(10):8797-8826.
Lin, Chu-Hsuan; Liu, Chee Wee. 2010. "Metal-Insulator-Semiconductor Photodetectors." Sensors 10, no. 10: 8797-8826.