Next Article in Journal
Wireless Intelligent Sensors Management Application Protocol-WISMAP
Next Article in Special Issue
Characterization of a Photodiode Coupled with a Si Nanowire-FET on a Plastic Substrate
Previous Article in Journal
Improved Classification of Orthosiphon stamineus by Data Fusion of Electronic Nose and Tongue Sensors
Previous Article in Special Issue
ZnO-Based Ultraviolet Photodetectors
Sensors 2010, 10(10), 8797-8826; doi:10.3390/s101008797
Review

Metal-Insulator-Semiconductor Photodetectors

1
 and 2,*
Received: 5 August 2010; in revised form: 7 September 2010 / Accepted: 14 September 2010 / Published: 28 September 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)
Abstract: The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III-V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows.
Keywords: MIS; metal-insulator-semiconductor; photodetector MIS; metal-insulator-semiconductor; photodetector
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Export to BibTeX |
EndNote


MDPI and ACS Style

Lin, C.-H.; Liu, C.W. Metal-Insulator-Semiconductor Photodetectors. Sensors 2010, 10, 8797-8826.

AMA Style

Lin C-H, Liu CW. Metal-Insulator-Semiconductor Photodetectors. Sensors. 2010; 10(10):8797-8826.

Chicago/Turabian Style

Lin, Chu-Hsuan; Liu, Chee Wee. 2010. "Metal-Insulator-Semiconductor Photodetectors." Sensors 10, no. 10: 8797-8826.


Sensors EISSN 1424-8220 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert