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Sensors 2010, 10(9), 8604-8634; doi:10.3390/s100908604

ZnO-Based Ultraviolet Photodetectors

* , *  and *
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
* Authors to whom correspondence should be addressed.
Received: 30 July 2010 / Revised: 25 August 2010 / Accepted: 10 September 2010 / Published: 17 September 2010
(This article belongs to the Special Issue Photodetectors and Imaging Technologies)


Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.
Keywords: ZnO; photodetector; MSM; p-n junction; Schottky; response ZnO; photodetector; MSM; p-n junction; Schottky; response
This is an open access article distributed under the Creative Commons Attribution License (CC BY) which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

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Liu, K.; Sakurai, M.; Aono, M. ZnO-Based Ultraviolet Photodetectors. Sensors 2010, 10, 8604-8634.

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