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ZnO-Based Ultraviolet Photodetectors
International Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan
* Authors to whom correspondence should be addressed.
Received: 30 July 2010; in revised form: 25 August 2010 / Accepted: 10 September 2010 / Published: 17 September 2010
Abstract: Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal–semiconductor–metal photodiodes and p–n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.
Keywords: ZnO; photodetector; MSM; p-n junction; Schottky; response
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Cite This Article
MDPI and ACS Style
Liu, K.; Sakurai, M.; Aono, M. ZnO-Based Ultraviolet Photodetectors. Sensors 2010, 10, 8604-8634.
Liu K, Sakurai M, Aono M. ZnO-Based Ultraviolet Photodetectors. Sensors. 2010; 10(9):8604-8634.
Liu, Kewei; Sakurai, Makoto; Aono, Masakazu. 2010. "ZnO-Based Ultraviolet Photodetectors." Sensors 10, no. 9: 8604-8634.