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Int. J. Mol. Sci. 2010, 11(5), 2241-2252; doi:10.3390/ijms11052242
Article
Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors
1
School of Engineering, Bar-Ilan University, Ramat-Gan 52900, Israel
2
Nanotechnology Center, Bar-Ilan University, Ramat-Gan 52900, Israel
* Author to whom correspondence should be addressed.
Received: 3 April 2010; in revised form: 19 April 2010 / Accepted: 7 May 2010 / Published: 25 May 2010
(This article belongs to the Special Issue Molecular Self-Assembly)
Abstract: In this paper, we present the self assembly procedure as well as experimental results of a novel method for constructing well defined arrangements of self assembly metallic nano particles into sophisticated nano structures. The self assembly concept is based on focused ion beam (FIB) technology, where metallic nano particles are self assembled due to implantation of positive gallium ions into the insulating material (e.g., silica as in silicon on insulator wafers) that acts as intermediary layer between the substrate and the negatively charge metallic nanoparticles.
Keywords: nanotechnology; van der Waals forces; intra molecular self-assembly
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MDPI and ACS Style
Shahmoon, A.; Limon, O.; Girshevitz, O.; Zalevsky, Z. Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors. Int. J. Mol. Sci. 2010, 11, 2241-2252.
AMA StyleShahmoon A, Limon O, Girshevitz O, Zalevsky Z. Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors. International Journal of Molecular Sciences. 2010; 11(5):2241-2252.
Chicago/Turabian StyleShahmoon, Asaf; Limon, Ofer; Girshevitz, Olga; Zalevsky, Zeev. 2010. "Self Assembly of Nano Metric Metallic Particles for Realization of Photonic and Electronic Nano Transistors." Int. J. Mol. Sci. 11, no. 5: 2241-2252.
Int. J. Mol. Sci.
EISSN 1422-0067
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