Thin Film Microelectronic Devices and Circuits

doi:10.3390/books978-3-7258-3299-6

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Keywords

top-gate IGZO TFT; hydrogen-containing; buffer layer; technical computer-aided design simulation; MoS₂; pulsed laser deposition; pulsed laser energy density; heterojunction; electro-optic modulation; polarization independent; lithium niobate; mode converter; low temperature; self-exothermic reaction; MIM device; transparent; low leakage current; high dielectric constant; MIM; capacitors; metal–insulator–metal; electrical performance; Si_xN_y; cap density; VCC; TCC; 3D light-direction sensor; deep learning; nanorings; light-field reconstruction; MIS; electrospinning; TiO₂; leakage current; electrospun dielectric layer; memristor; neural network; weight quantization; recognition; high-k; high entropy metal oxide; solution method; TFTs; praseodymium-doped; indium zinc oxide; annealing temperature; flexible; thin-film transistor; n/a

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Thin Film Microelectronic Devices and Circuits

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February 2025

130 pages

ISBN 978-3-7258-3300-9 (Hardback)
ISBN 978-3-7258-3299-6 (PDF)

https://doi.org/10.3390/books978-3-7258-3299-6

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This is a Reprint of the Special Issue Thin Film Microelectronic Devices and Circuits that was published in

Biology & Life Sciences

Summary

This Special Issue comprises 10 original papers about recent advances in the research and development of thin-film microelectronic devices and circuits (TFMDCs). Specifically, three microelectronic devices are covered here, namely thin-film transistors (three papers), two terminal thin-film components (five papers), and optical devices (two papers).