Reprint
Nanoelectronic Materials, Devices and Modeling
Edited by
July 2019
242 pages
- ISBN978-3-03921-225-5 (Paperback)
- ISBN978-3-03921-226-2 (PDF)
This book is a reprint of the Special Issue Nanoelectronic Materials, Devices and Modeling that was published in
Computer Science & Mathematics
Engineering
Physical Sciences
Summary
As CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.
Format
- Paperback
License
© 2019 by the authors; CC BY-NC-ND license
Keywords
UAV; vision localization; hierarchical; landing; information integration; memristor; synaptic device; spike-timing-dependent plasticity; neuromorphic computation; memristive device; ZnO films; conditioned reflex; quantum dot; sample grating; cross-gain modulation; bistability; distributed Bragg; semiconductor optical amplifier; topological insulator; field-effect transistor; nanostructure synthesis; optoelectronic devices; topological magnetoelectric effect; drain-induced barrier lowering (DIBL); gate-induced drain leakage (GIDL); silicon on insulator (SOI); graphene; supercapacitor; energy storage; ionic liquid; UV irradiation; luminescent centres; bismuth ions; two-photon process; oscillatory neural networks; pattern recognition; higher order synchronization; thermal coupling; vanadium dioxide; band-to-band tunneling; L-shaped tunnel field-effect-transistor; double-gate tunnel field-effect-transistor; corner-effect; AlGaN/GaN; high-electron mobility transistor (HEMTs); p-GaN; enhancement-mode; 2DEG density; InAlN/GaN heterostructure; polarization effect; quantum mechanical; gallium nitride; MISHEMT; dielectric layer; interface traps; current collapse; PECVD; gate-induced drain leakage (GIDL); drain-induced barrier lowering (DIBL); recessed channel array transistor (RCAT); on-current (Ion); off-current (Ioff); subthreshold slope (SS); threshold voltage (VTH); saddle FinFET (S-FinFET); potential drop width (PDW); shallow trench isolation (STI); source/drain (S/D); conductivity; 2D material; Green’s function; reflection transmision method; variational form; dual-switching transistor; third harmonic tuning; low voltage; high efficiency; CMOS power amplifier IC; insulator–metal transition (IMT); charge injection; Mott transition; conductive atomic force microscopy (cAFM); gate field effect; atomic layer deposition (ALD); zinc oxide; silicon; ZnO/Si; electron affinity; bandgap tuning; conduction band offset; heterojunction; solar cells; PC1D; vertical field-effect transistor (VFET); back current blocking layer (BCBL); gallium nitride (GaN); normally off power devices; n/a