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Proceedings 2017, 1(4), 437; doi:10.3390/proceedings1040437

Gas Sensing Approaches Based on WO3 Nanowire-Back Gated Devices

MINOS/EMaS, Universitat Rovira i Virgili, Av. Paìsos Catalans 26, 43007 Tarragona, Spain
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
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Published: 9 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
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Abstract

This paper present a new design and configuration of metal oxide gas sensor based on back-gated device that can operate at low temperature. Gold electrodes patterned onto an oxidized, heavily doped, p-type silicon substrate were designed and fabricated at a wafer level. The Au—electrodes were used as source—drain metal contacts and a third gate electrode was connected from the backside of the substrate. Tungsten oxide nanowires decorated with Pt-nanoparticles were directly grown employing aerosol assisted-CVD (AA-CVD) on top of the electrode area. Gas sensing properties of the back-gated device in the presence of air and hydrogen gas reveals characteristic response modulated by the applied gate potential at room temperature. It was found that the IDS-VGS plot illustrates characteristic field effect transistor with an inherent adsorptive surface electron transfer of the nanowires accompanied with the applied gate potential induced charge transfer. These counter-acting mechanisms might persuade for the application of back-gated device as a promising n-channel metal oxide gas sensor operating at low temperature or even room temperature.
Keywords: WO3 nanowire; FET; AA-CVD; gas sensor WO3 nanowire; FET; AA-CVD; gas sensor
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Welearegay, T.G.; Calavia, R.; Ionescu, R.; Llobet, E. Gas Sensing Approaches Based on WO3 Nanowire-Back Gated Devices. Proceedings 2017, 1, 437.

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