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Investigation of the Salt Concentration Dependence of Water-Gated Field Effect Transistors (WG-FET) Using 16-nm-Thick Single Crystalline Si Film
 
 
Proceeding Paper

Article Versions Notes

Proceedings 2017, 1(4), 437; https://doi.org/10.3390/proceedings1040437
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article pdf uploaded. 15 August 2017 07:58 CEST Version of Record https://www.mdpi.com/2504-3900/1/4/437/pdf
article html file updated 26 September 2022 15:37 CEST Original file https://www.mdpi.com/2504-3900/1/4/437/html
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