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Proceedings 2017, 1(4), 375; doi:10.3390/proceedings1040375

Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation

1
Institute of Semiconductor Technology (IHT), TU Braunschweig, 38106 Braunschweig, Germany
2
Laboratory for Emerging Nanometrology (LENA), 38106 Braunschweig, Germany
3
Department 5.1 Surface Metrology, Physikalisch-Technische Bundesanstalt (PTB), 38116 Braunschweig, Germany
4
Research Center for Physics, Indonesian Institute of Sciences (LIPI), 15314 Tangerang Selatan, Indonesia
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 9 August 2017
Download PDF [524 KB, uploaded 21 August 2017]

Abstract

Silicon and germanium pillar structures (i.e., micro- and nanowires) were fabricated by a top-down approach including nanoimprint lithography and cryogenic dry etching. Various etching parameters were tested to ensure a reliable fabrication process. The impression of nanomechanical properties of such 3-D structures were extracted experimentally by nanoindentation showing promising and comparative results to utilize such nanostructures as small force artefacts.
Keywords: nanoindentation; stiffness; nanoimprint lithography; nanowires; dry etching; cryogenic nanoindentation; stiffness; nanoimprint lithography; nanowires; dry etching; cryogenic
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Hamdana, G.; Granz, T.; Bertke, M.; Li, Z.; Puranto, P.; Brand, U.; Wasisto, H.S.; Peiner, E. Nanomechanical Traceable Metrology of Vertically Aligned Silicon and Germanium Nanowires by Nanoindentation. Proceedings 2017, 1, 375.

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