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Proceedings 2017, 1(4), 369; doi:10.3390/proceedings1040369

Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure

1
Ioffe Institute, St. Petersburg, Russia
2
Peter the Great Saint-Petersburg Polytechnic University, St. Petersburg, Russia
Presented at the Eurosensors 2017 Conference, Paris, France, 3–6 September 2017.
*
Author to whom correspondence should be addressed.
Published: 17 August 2017
(This article belongs to the Proceedings of Eurosensors 2017)
Download PDF [279 KB, uploaded 17 August 2017]

Abstract

Pd–anodic oxide–InP metal–oxide–semiconductor (MOS) structures are fabricated to develop a hydrogen sensor capable of effectively operating at room temperature. Through palladium amount varying the signal recovery time has been improved (became shorter). Decrease of photovoltage and strong increase of photocurrent were observed for illuminated by LED structures under hydrogen pulse exposure. The gas testing was carried out in 0.1–10% hydrogen in nitrogen, and in 100% hydrogen. As a result, low power-consumption hydrogen sensor with a fast response-recovery time 1/20 s. was developed.
Keywords: MOS-structure; Pd layer; optopair; hydrogen sensor; room-temperature operating; fast response-recovery time MOS-structure; Pd layer; optopair; hydrogen sensor; room-temperature operating; fast response-recovery time
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Shutaev, V.; Imenkov, A.; Grebenshchikova, E.; Sidorov, V.; Virko, D.; Makarov, S.; Yakovlev, Y. Photoelectrical Hydrogen Sensor Based on Pd/Anodic Oxide/InP Structure. Proceedings 2017, 1, 369.

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