Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)
Abstract
:1. Introduction
2. Materials and Methods
3. Results
4. Discussions
5. Conclusions
Author Contributions
Funding
Institutional Review Board Statement
Informed Consent Statement
Data Availability Statement
Acknowledgments
Conflicts of Interest
References
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Tan, G.; Shuhaimi, A.; Norhaniza, R.; Zahir, N.; Low, Y.J.; Wong, Y.H.; Majid, W.H.A. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT). Photonics 2022, 9, 646. https://doi.org/10.3390/photonics9090646
Tan G, Shuhaimi A, Norhaniza R, Zahir N, Low YJ, Wong YH, Majid WHA. Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT). Photonics. 2022; 9(9):646. https://doi.org/10.3390/photonics9090646
Chicago/Turabian StyleTan, Gary, Ahmad Shuhaimi, Rizuan Norhaniza, Norhilmi Zahir, Yan Jie Low, Yew Hoong Wong, and Wan Haliza Abd Majid. 2022. "Enhancement in Structural and Electroluminescence Properties of Green Light Emission for Semipolar (11–22) InGaN/GaN Based Grown on m-Plane Sapphire via Low Temperature Ammonia Treatment (LTAT)" Photonics 9, no. 9: 646. https://doi.org/10.3390/photonics9090646