Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices
AbstractHeterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems. View Full-Text
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Liu, D.; Zhou, W.; Ma, Z. Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices. Photonics 2016, 3, 40.
Liu D, Zhou W, Ma Z. Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices. Photonics. 2016; 3(2):40.Chicago/Turabian Style
Liu, Dong; Zhou, Weidong; Ma, Zhenqiang. 2016. "Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices." Photonics 3, no. 2: 40.
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