Photonics 2016, 3(2), 40; doi:10.3390/photonics3020040
Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices
1
Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
2
Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
*
Author to whom correspondence should be addressed.
Received: 1 June 2016 / Revised: 13 June 2016 / Accepted: 14 June 2016 / Published: 17 June 2016
Abstract
Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems. View Full-TextKeywords:
transfer printing; semiconductor nanomembrane; light-emitting diode; photodetectors; flexible optoelectronics; silicon photonics
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Liu, D.; Zhou, W.; Ma, Z. Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices. Photonics 2016, 3, 40.
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