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Photonics 2016, 3(2), 40; doi:10.3390/photonics3020040

Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices

Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA
Department of Electrical Engineering, University of Texas at Arlington, Arlington, TX 76019, USA
Author to whom correspondence should be addressed.
Received: 1 June 2016 / Revised: 13 June 2016 / Accepted: 14 June 2016 / Published: 17 June 2016


Heterogeneous integration between silicon (Si), III-V group material and Germanium (Ge) is highly desirable to achieve monolithic photonic circuits. Transfer-printing and stacking between different semiconductor nanomembranes (NMs) enables more versatile combinations to realize high-performance light-emitting and photodetecting devices. In this paper, lasers, including vertical and edge-emitting structures, flexible light-emitting diode, photodetectors at visible and infrared wavelengths, as well as flexible photodetectors, are reviewed to demonstrate that the transfer-printed semiconductor nanomembrane stacked layers have a large variety of applications in integrated optoelectronic systems. View Full-Text
Keywords: transfer printing; semiconductor nanomembrane; light-emitting diode; photodetectors; flexible optoelectronics; silicon photonics transfer printing; semiconductor nanomembrane; light-emitting diode; photodetectors; flexible optoelectronics; silicon photonics

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Liu, D.; Zhou, W.; Ma, Z. Semiconductor Nanomembrane-Based Light-Emitting and Photodetecting Devices. Photonics 2016, 3, 40.

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