Latest Advances in the Generation of Single Photons in Silicon Carbide
AbstractThe major barrier for optical quantum information technologies is the absence of reliable single photons sources providing non-classical light states on demand which can be easily and reliably integrated with standard processing protocols for quantum device fabrication. New methods of generation at room temperature of single photons are therefore needed. Heralded single photon sources are presently being sought based on different methods built on different materials. Silicon Carbide (SiC) has the potentials to serve as the preferred material for quantum applications. Here, we review the latest advances in single photon generation at room temperatures based on SiC. View Full-Text
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Boretti, A.; Rosa, L. Latest Advances in the Generation of Single Photons in Silicon Carbide. Technologies 2016, 4, 16.
Boretti A, Rosa L. Latest Advances in the Generation of Single Photons in Silicon Carbide. Technologies. 2016; 4(2):16.Chicago/Turabian Style
Boretti, Albert; Rosa, Lorenzo. 2016. "Latest Advances in the Generation of Single Photons in Silicon Carbide." Technologies 4, no. 2: 16.
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