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Electronics 2017, 6(1), 7; doi:10.3390/electronics6010007

High-Speed Non-Volatile Optical Memory: Achievements and Challenges

Spintronics Research Center, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8568, Japan
Academic Editor: Matteo Cantoni
Received: 31 October 2016 / Revised: 22 December 2016 / Accepted: 28 December 2016 / Published: 10 January 2017
(This article belongs to the Special Issue Spin Optoelectronics)
View Full-Text   |   Download PDF [2213 KB, uploaded 10 January 2017]   |  

Abstract

We have proposed, fabricated, and studied a new design of a high-speed optical non-volatile memory. The recoding mechanism of the proposed memory utilizes a magnetization reversal of a nanomagnet by a spin-polarized photocurrent. It was shown experimentally that the operational speed of this memory may be extremely fast above 1 TBit/s. The challenges to realize both a high-speed recording and a high-speed reading are discussed. The memory is compact, integratable, and compatible with present semiconductor technology. If realized, it will advance data processing and computing technology towards a faster operation speed. View Full-Text
Keywords: high-speed optical memory; spin-transfer torque; ferromagnetic-metal/semiconductor hybrid; nanomagnet; spin-polarized current; high-speed electron transport high-speed optical memory; spin-transfer torque; ferromagnetic-metal/semiconductor hybrid; nanomagnet; spin-polarized current; high-speed electron transport
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Zayets, V. High-Speed Non-Volatile Optical Memory: Achievements and Challenges. Electronics 2017, 6, 7.

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