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Electronics 2017, 6(1), 19; doi:10.3390/electronics6010019

Progress towards Spin-Based Light Emission in Group IV Semiconductors

LNESS and Dipartimento di Scienza dei Materiali, Università degli Studi di Milano-Bicocca, via Cozzi 55, I-20125 Milano, Italy
Authors to whom correspondence should be addressed.
Academic Editor: Matteo Cantoni
Received: 21 December 2016 / Revised: 27 January 2017 / Accepted: 20 February 2017 / Published: 7 March 2017
(This article belongs to the Special Issue Spin Optoelectronics)
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Spin-optoelectronics is an emerging technology in which novel and advanced functionalities are enabled by the synergetic integration of magnetic, optical and electronic properties onto semiconductor-based devices. This article reviews the possible implementation and convergence of spintronics and photonics concepts on group IV semiconductors: the core materials of mainstream microelectronics. In particular, we describe the rapid pace of progress in the achievement of lasing action in the notable case of Ge-based heterostructures and devote special attention to the pivotal role played by optical investigations in advancing the understanding of the rich spin physics of group IV materials. Finally, we scrutinize recent developments towards the monolithic integration on Si of a new class of spin-based light emitting devices having prospects for applications in fields such as cryptography and interconnects. View Full-Text
Keywords: spintronics; photonics; optoelectronics; light sources; strain; optical spin orientation; group IV materials; germanium; silicon; GeSn spintronics; photonics; optoelectronics; light sources; strain; optical spin orientation; group IV materials; germanium; silicon; GeSn

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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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De Cesari, S.; Vitiello, E.; Giorgioni, A.; Pezzoli, F. Progress towards Spin-Based Light Emission in Group IV Semiconductors. Electronics 2017, 6, 19.

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