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Electronics 2016, 5(3), 52; doi:10.3390/electronics5030052

Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections

Department of Electronic Apparatus Design, Institute of Nanotechnology, Electronics, and Electronic Equipment Engineering, Southern Federal University, 2 Shevchenko St., Taganrog 347922, Russia
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Academic Editor: Farid Medjdoub
Received: 3 July 2016 / Revised: 26 August 2016 / Accepted: 30 August 2016 / Published: 7 September 2016
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Abstract

In this paper, we consider the problem of the research and development of high-speed semiconductor photodetectors suitable for operation as parts of on-chip optical interconnections together with the high-speed laser modulators based on the AIIIBV nanoheterostructures. This research is aimed at the development of the models and modelling aids designed for the simulation of carrier transport and accumulation processes taking place in on-chip photosensitive devices during the detection of subpicosecond laser pulses. Another aim of the paper is to apply the aforementioned aids for the investigation of GaAs p-i-n and Schottky-barrier photodiodes. We propose the non-stationary drift-diffusion models, an original numerical simulation technique and the applied software allowing one to simulate the photosensitive devices with different electrophysical, constructive and technological parameters. We have taken into account different kinds of carrier generation and recombination processes, the effects of electron intervalley transition and carrier drift velocity saturation in order to improve the simulation results’ adequacy. We have concluded that the influence of these effects on the performance of photodetectors for on-chip optical interconnections is significant. The response time of GaAs p-i-n and Schottky-barrier photodiodes calculated taking into account the drift velocity dependence on electric field intensity is insufficient for the adequate detection of subpicosecond laser pulses. According to the simulation results, it is reasonable to develop the methods aimed at the increase in the drift velocity of charge carriers in the photodetector active region by means of built-in electric field reduction. View Full-Text
Keywords: on-chip optical interconnections; high-speed integrated photodetectors; p-i-n photodiode; Schottky-barrier photodiode; numerical simulation; drift-diffusion model; finite difference simulation technique on-chip optical interconnections; high-speed integrated photodetectors; p-i-n photodiode; Schottky-barrier photodiode; numerical simulation; drift-diffusion model; finite difference simulation technique
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Pisarenko, I.; Ryndin, E. Numerical Drift-Diffusion Simulation of GaAs p-i-n and Schottky-Barrier Photodiodes for High-Speed AIIIBV On-Chip Optical Interconnections. Electronics 2016, 5, 52.

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