Next Article in Journal
Organic Semiconductors: Past, Present and Future
Previous Article in Journal
Garment-Integrated Bend Sensor
Article Menu

Export Article

Open AccessReview
Electronics 2014, 3(4), 582-593; doi:10.3390/electronics3040582

A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors

Vanderbilt University, Department of Electrical Engineering and Computer Science and Institute for Space and Defense Electronics, Nashville, TN 37235-1824, USA
Received: 5 July 2014 / Revised: 15 August 2014 / Accepted: 16 September 2014 / Published: 30 September 2014
View Full-Text   |   Download PDF [1898 KB, uploaded 30 September 2014]   |  

Abstract

Silicon VDMOS power MOSFET technology is being supplanted by UMOS (or trench) power MOSFET technology. Designers of spaceborne power electronics systems incorporating this newer power MOSFET technology need to be aware of several unique threats that this technology may encounter in space. Space radiation threats to UMOS power devices include vulnerabilities to SEB, SEGR, and microdose. There have been relatively few studies presented or published on the effects of radiation on this device technology. The S-O-A knowledge of UMOS power device degradation and failure under heavy-ion exposure is reviewed. View Full-Text
Keywords: power transistors; VDMOS; UMOS; MOSFET; radiation effects; space electronics; microdose; SEB; SEGR power transistors; VDMOS; UMOS; MOSFET; radiation effects; space electronics; microdose; SEB; SEGR
This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

Scifeed alert for new publications

Never miss any articles matching your research from any publisher
  • Get alerts for new papers matching your research
  • Find out the new papers from selected authors
  • Updated daily for 49'000+ journals and 6000+ publishers
  • Define your Scifeed now

SciFeed Share & Cite This Article

MDPI and ACS Style

Galloway, K.F. A Brief Review of Heavy-Ion Radiation Degradation and Failure of Silicon UMOS Power Transistors. Electronics 2014, 3, 582-593.

Show more citation formats Show less citations formats

Related Articles

Article Metrics

Article Access Statistics

1

Comments

[Return to top]
Electronics EISSN 2079-9292 Published by MDPI AG, Basel, Switzerland RSS E-Mail Table of Contents Alert
Back to Top