Electronics 2014, 3(2), 255-265; doi:10.3390/electronics3020255
Review

Anomalous Response in Heteroacene-Based Organic Field Effect Transistors under High Pressure

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Received: 15 February 2014; in revised form: 28 March 2014 / Accepted: 31 March 2014 / Published: 10 April 2014
(This article belongs to the Special Issue Organic Semiconductors)
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Abstract: Carrier transport properties of organic field effect transistors in dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene single crystals have been investigated under high pressure. In contrast to the typical pressure effect of monotonic increase in charge transfer rates according to the application of external hydrostatic pressure, it is clarified that the present organic semiconductor devices exhibit nonmonotonic pressure response, such as negative pressure effect. X-ray diffraction analysis under high pressure reveals that on-site molecular orientation and displacement in the heteroacene molecule is assumed to be the origin for the anomalous pressure effects.
Keywords: organic field effect transistor; pressure effect; carrier transport; x-ray diffraction analysis
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MDPI and ACS Style

Sakai, K.-I.; Takeya, J. Anomalous Response in Heteroacene-Based Organic Field Effect Transistors under High Pressure. Electronics 2014, 3, 255-265.

AMA Style

Sakai K-I, Takeya J. Anomalous Response in Heteroacene-Based Organic Field Effect Transistors under High Pressure. Electronics. 2014; 3(2):255-265.

Chicago/Turabian Style

Sakai, Ken-ichi; Takeya, Jun. 2014. "Anomalous Response in Heteroacene-Based Organic Field Effect Transistors under High Pressure." Electronics 3, no. 2: 255-265.

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