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Coatings 2018, 8(9), 303; https://doi.org/10.3390/coatings8090303

Improvement of Thin Film Adhesion Due to Bombardment by Fast Argon Atoms

Department of High-Efficiency Machining Technologies, Moscow State University of Technology STANKIN, Moscow 127055, Russia
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Received: 4 July 2018 / Revised: 24 August 2018 / Accepted: 28 August 2018 / Published: 28 August 2018
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Abstract

A new hollow cathode sputtering system is used for beam-assisted deposition of thin films on dielectric substrates. A copper target placed at the hollow cathode bottom is uniformly sputtered by argon ions from the glow discharge plasma filling the cathode. Through an emissive grid, sputtered copper atoms leave the cathode together with accelerated argon ions. On their way to the substrate, the ions—due to charge exchange collisions—turn into fast argon atoms bombarding the growing film. With increasing argon ion energy, continuous bombardment results in the film adhesion improvement and reduction of the deposition rate down to zero, at an energy of about 2 keV. The pulsed bombardment does not influence the film deposition rate, and results in a monotonic growth of the film adhesion up to 20 MPa when increasing the fast atom energy up to 10 keV. View Full-Text
Keywords: thin films; dielectric substrates; neutral beam assisted deposition; adhesion improvement thin films; dielectric substrates; neutral beam assisted deposition; adhesion improvement
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).
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Grigoriev, S.; Metel, A.; Volosova, M.; Melnik, Y. Improvement of Thin Film Adhesion Due to Bombardment by Fast Argon Atoms. Coatings 2018, 8, 303.

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