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Coatings 2017, 7(3), 43; doi:10.3390/coatings7030043

Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis

1
Department of Mechanical Engineering, National Central University, Taoyuan 32001, Taiwan
2
Department of Chemical Engineering, Chung Yuan Christian University, Taoyuan 32023, Taiwan
3
Industrial Technology Research Institute, 195, Sec. 4, Chung Hsing Rd., Chutung, Hsinchu 31040, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editors: Mingheng Li and Maria Miritello
Received: 3 February 2017 / Revised: 2 March 2017 / Accepted: 7 March 2017 / Published: 15 March 2017
(This article belongs to the Special Issue Chemical Vapor Deposition)

Abstract

A numerical procedure was performed to simplify the complicated mechanism of an epitaxial thin-film growth process. In this study, three numerical mechanism models are presented for verifying the growth rate of the gallium nitride (GaN) mechanism. The mechanism models were developed through rate of production analysis. All of the results can be compared in one schematic diagram, and the differences among these three mechanisms are pronounced at high temperatures. The simplified reaction mechanisms were then used as input for a two-dimensional computational fluid dynamics code FLUENT, enabling the accurate prediction of growth rates. Validation studies are presented for two types of laboratory-scale reactors (vertical and horizontal). A computational study including thermal and flow field was also performed to investigate the fluid dynamic in those reactors. For each study, the predictions agree acceptably well with the experimental data, indicating the reasonable accuracy of the reaction mechanisms. View Full-Text
Keywords: MOCVD; epitaxy; mechanism; GaN; numerical; thin film growth rate MOCVD; epitaxy; mechanism; GaN; numerical; thin film growth rate
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Hu, C.-K.; Chen, C.-J.; Wei, T.-C.; Li, T.T.; Wang, C.-C.; Huang, C.-Y. Investigation of a Simplified Mechanism Model for Prediction of Gallium Nitride Thin Film Growth through Numerical Analysis. Coatings 2017, 7, 43.

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