Characterization of Hydroxyapatite (HA) Sputtering Targets by APS Methods
AbstractRadio frequency (RF) sputtering is a potential medical device coating technology that is commercializable; however, a suitable commercialized target for sputtering the hydroxyapatite (HA) coating onto titanium medical devices is more important. Therefore, this study used three HA targets in conducting sputtering experiments for HA films, which were manufactured in a laboratory by using three different processes: cold pressing and sintering (CPS), hot isostatic pressing (HIP), and atmospheric plasma spraying (APS). Subsequently, the sputtering performance of each type of target and the properties of the HA films were assessed to develop an appropriate process for modifying the surfaces of medical devices. The experimental results showed that the APS target, with a density of approximately 2.83 g/cm3, was suitable for use in HA sputtering. Additionally, the APS target could withstand a high discharge power over 300 W, whereas the CPS target could nearly endure a power below 70 W. The APS target, with Ca/P ratio of 2.401, consisted of a combination of HA, α-tricalcium phosphate (α-TCP), β-TCP, and tetracalcium phosphate phases (TTCP). In addition to being able to perform at a high sputtering power of more than 300 W, the APS target achieved a higher deposition rate than did the CPS target. This study shows that the processing technology used for the APS target is a potential method for applying HA sputtering for the surface modification of artificial aggregates. View Full-Text
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Hung, K.-Y.; Lai, H.-C.; Yang, Y.-C.; Feng, H.-P. Characterization of Hydroxyapatite (HA) Sputtering Targets by APS Methods. Coatings 2017, 7, 197.
Hung K-Y, Lai H-C, Yang Y-C, Feng H-P. Characterization of Hydroxyapatite (HA) Sputtering Targets by APS Methods. Coatings. 2017; 7(11):197.Chicago/Turabian Style
Hung, Kuo-Yung; Lai, Hong-Chen; Yang, Yung-Chin; Feng, Hui-Ping. 2017. "Characterization of Hydroxyapatite (HA) Sputtering Targets by APS Methods." Coatings 7, no. 11: 197.
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