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Journal: Appl. Sci., 2018
Volume: 8
Number: 1406

Article: Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain
Authors: by Hsin-Hui Hu, Yan-Wei Zeng and Kun-Ming Chen
Link: https://www.mdpi.com/2076-3417/8/8/1406

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