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Appl. Sci. 2017, 7(4), 325; doi:10.3390/app7040325

A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer

1
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
2
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Jiwang Yan
Received: 20 February 2017 / Revised: 22 March 2017 / Accepted: 23 March 2017 / Published: 27 March 2017
View Full-Text   |   Download PDF [2736 KB, uploaded 27 March 2017]   |  

Abstract

This study reports on the use of a substrate-reclamation technology for a gallium nitride (GaN)-based lighting-emitting diode (LED) wafer. There are many ways to reclaim sapphire substrates of scrap LED wafers. Compared with a common substrate-reclamation method based on chemical mechanical polishing, this research technology exhibits simple process procedures, without impairing the surface morphology and thickness of the sapphire substrate, as well as the capability of an almost unlimited reclamation cycle. The optical performances of LEDs on non-reclaimed and reclaimed substrates were consistent for 28.37 and 27.69 mcd, respectively. View Full-Text
Keywords: GaN-based LEDs; substrate-reclamation; sapphire substrate GaN-based LEDs; substrate-reclamation; sapphire substrate
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Huang, S.-Y.; Lin, P.-J. A Substrate-Reclamation Technology for GaN-Based Lighting-Emitting Diodes Wafer. Appl. Sci. 2017, 7, 325.

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