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Appl. Sci. 2017, 7(1), 87; doi:10.3390/app7010087

Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition

1
Department of Materials Science and Engineering, Da-Yeh University, Changhua 51591, Taiwan
2
Department of Industrial Engineering and Management, Da-Yeh University, Changhua 51591, Taiwan
3
Department of Materials Science and Engineering, National Chung Hsing University, Taichung 40227, Taiwan
*
Author to whom correspondence should be addressed.
Academic Editor: Jiwang Yan
Received: 1 December 2016 / Revised: 10 January 2017 / Accepted: 11 January 2017 / Published: 17 January 2017
(This article belongs to the Section Materials)
View Full-Text   |   Download PDF [2813 KB, uploaded 17 January 2017]   |  

Abstract

Approximately 4-μm-thick GaN epitaxial films were directly grown onto a GaN/sapphire template, sapphire, Si(111), and Si(100) substrates by high-temperature pulsed laser deposition (PLD). The influence of the substrate type on the crystalline quality, surface morphology, microstructure, and stress states was investigated by X-ray diffraction (XRD), photoluminescence (PL), atomic force microscopy (AFM), transmission electron microscopy (TEM), and Raman spectroscopy. Raman scattering spectral analysis showed a compressive film stress of −0.468 GPa for the GaN/sapphire template, whereas the GaN films on sapphire, Si(111), and Si(100) exhibited a tensile stress of 0.21, 0.177, and 0.081 GPa, respectively. Comparative analysis indicated the growth of very close to stress-free GaN on the Si(100) substrate due to the highly directional energetic precursor migration on the substrate’s surface and the release of stress in the nucleation of GaN films during growth by the high-temperature (1000 °C) operation of PLD. Moreover, TEM images revealed that no significant GaN meltback (Ga–Si) etching process was found in the GaN/Si sample surface. These results indicate that PLD has great potential for developing stress-free GaN templates on different substrates and using them for further application in optoelectronic devices. View Full-Text
Keywords: GaN; pulsed laser deposition; transmission electron microscopy GaN; pulsed laser deposition; transmission electron microscopy
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MDPI and ACS Style

Wang, W.-K.; Huang, S.-Y.; Jiang, M.-C.; Wuu, D.-S. Optoelectronic Properties and Structural Characterization of GaN Thick Films on Different Substrates through Pulsed Laser Deposition. Appl. Sci. 2017, 7, 87.

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