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Appl. Sci. 2016, 6(9), 236; doi:10.3390/app6090236

The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors

1
Department of Electrical and Computer Engineering, University of Texas at Austin, Austin, TX 78758, USA
2
Microelectronics Research Center, University of Texas at Austin, Austin, TX 78758, USA
*
Author to whom correspondence should be addressed.
Academic Editor: Andres Castellanos-Gomez
Received: 19 July 2016 / Revised: 11 August 2016 / Accepted: 12 August 2016 / Published: 23 August 2016
(This article belongs to the Special Issue Two-Dimensional Transition Metal Dichalcogenides)
View Full-Text   |   Download PDF [1472 KB, uploaded 23 August 2016]   |  

Abstract

We report the improvement of the electrical performance of field effect transistors (FETs) fabricated on monolayer chemical vapor deposited (CVD) MoS2, by applying an interacting fluoropolymer capping layer (Teflon-AF). The electrical characterizations of more than 60 FETs, after applying Teflon-AF cap, show significant improvement of the device properties and reduced device to device variation. The improvement includes: 50% reduction of the average gate hysteresis, 30% reduction of the subthreshold swing and about an order of magnitude increase of the current on-off ratio. These favorable changes in device performance are attributed to the reduced exposure of MoS2 channels to the adsorbates in the ambient which can be explained by the polar nature of Teflon-AF cap. A positive shift in the threshold voltage of all the measured FETs is observed, which translates to the more desirable enhancement mode transistor characteristics. View Full-Text
Keywords: transition metal dichalcogenides; 2-Dimensional materials; molybdenum disulfide; chemical vapor deposition; field effect transistors; fluoropolymer; passivation transition metal dichalcogenides; 2-Dimensional materials; molybdenum disulfide; chemical vapor deposition; field effect transistors; fluoropolymer; passivation
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Rahimi, S.; Ghosh, R.; Kim, S.; Dodabalapur, A.; Banerjee, S.; Akinwande, D. The Positive Effects of Hydrophobic Fluoropolymers on the Electrical Properties of MoS2 Transistors. Appl. Sci. 2016, 6, 236.

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