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Appl. Sci. 2016, 6(3), 78; doi:10.3390/app6030078

Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides

Institute of Photonics, Vienna University of Technology, 1040 Vienna, Austria
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Author to whom correspondence should be addressed.
Academic Editor: Andres Castellanos-Gomez
Received: 10 February 2016 / Revised: 3 March 2016 / Accepted: 7 March 2016 / Published: 10 March 2016
(This article belongs to the Special Issue Two-Dimensional Transition Metal Dichalcogenides)
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Abstract

We review the application of atomically thin transition metal dichalcogenides in optoelectronic devices. First, a brief overview of the optical properties of two-dimensional layered semiconductors is given and the role of excitons and valley dichroism in these materials are discussed. The following sections review and compare different concepts of photodetecting and light emitting devices, nanoscale lasers, single photon emitters, valleytronics devices, as well as photovoltaic cells. Lateral and vertical device layouts and different operation mechanisms are compared. An insight into the emerging field of valley-based optoelectronics is given. We conclude with a critical evaluation of the research area, where we discuss potential future applications and remaining challenges. View Full-Text
Keywords: 2D materials; transition metal dichalcogenides; optoelectronic devices 2D materials; transition metal dichalcogenides; optoelectronic devices
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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Pospischil, A.; Mueller, T. Optoelectronic Devices Based on Atomically Thin Transition Metal Dichalcogenides. Appl. Sci. 2016, 6, 78.

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