Localization Phenomena in Disordered Tantalum Films
Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, Prague 18221, Czech Republic
Department of Physics, Loughborough University, Loughborough LE11 3TU, UK
Lebedev Physical Institute, Russian Academy of Sciences, Leninskiy Prospekt 53, Moscow 119991, Russia
Author to whom correspondence should be addressed.
Received: 1 May 2017 / Revised: 29 June 2017 / Accepted: 30 June 2017 / Published: 7 July 2017
Using dc transport and wide-band spectroscopic ellipsometry techniques we study localization phenomena in highly disordered metallic
-Ta films grown by rf sputtering deposition. The dc transport study implies non-metallic behavior (d
< 0), with negative temperature coefficient of resistivity (TCR). We found that as the absolute TCR value increased, specifying an elevated degree of disorder, the free charge carrier Drude response decreases, indicating the enhanced charge carrier localization. Moreover, we found that the pronounced changes occur at the extended spectral range, involving not only the Drude resonance, but also the higher-energy Lorentz bands, in evidence of the attendant electronic correlations. We propose that the charge carrier localization, or delocalization, is accompanied by the pronounced electronic band structure reconstruction due to many-body effects, which may be the key feature for understanding the physics of highly disordered metals.
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MDPI and ACS Style
Kovaleva, N.; Chvostova, D.; Dejneka, A. Localization Phenomena in Disordered Tantalum Films. Metals 2017, 7, 257.
Kovaleva N, Chvostova D, Dejneka A. Localization Phenomena in Disordered Tantalum Films. Metals. 2017; 7(7):257.
Kovaleva, Natalia; Chvostova, Dagmar; Dejneka, Alexandr. 2017. "Localization Phenomena in Disordered Tantalum Films." Metals 7, no. 7: 257.
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