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Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale
AbstractThe use of materials with very attractive friction and wear properties has raised much attention in research and industrial sectors. A wide range of tribological applications, including rolling and sliding bearings, machining, mechanical seals, biomedical implants and microelectromechanical systems (MEMS), require thin films with high mechanical strength, chemical inertness, broad optical transparency, high refractive index, wide bandgap excellent thermal conductivity and extremely low thermal expansion. Carbon based thin films like diamond, diamond-like carbon, carbon nitride and cubic boron nitride known as “super-hard” material have been studied thoroughly as the ideal candidate for tribological applications. In this study, the results of experimental and simulation works on the nanotribological behavior of carbon films and fundamental mechanisms of friction and lubricity at the nano-scale are reviewed. The study is focused on the nanomechanical properties and analysis of the nanoscratching processes at low loads to obtain quantitative analysis, the comparison obtain quantitative analysis, the comparison of their elastic/plastic deformation response, and nanotribological behavior of the a-C, ta-C, a-C:H, CNx, and a-C:M films. For ta-C and a-C:M films new data are presented and discussed.
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Charitidis, C.A.; Koumoulos, E.P.; Dragatogiannis, D.A. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale. Lubricants 2013, 1, 22-47.View more citation formats
Charitidis CA, Koumoulos EP, Dragatogiannis DA. Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale. Lubricants. 2013; 1(2):22-47.Chicago/Turabian Style
Charitidis, Costas A.; Koumoulos, Elias P.; Dragatogiannis, Dimitrios A. 2013. "Nanotribological Behavior of Carbon Based Thin Films: Friction and Lubricity Mechanisms at the Nanoscale." Lubricants 1, no. 2: 22-47.