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Crystals 2017, 7(6), 166; doi:10.3390/cryst7060166

Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures

1
Prokhorov General Physics Institute, Russian Academy of Sciences, Vavilova Str. 38, Moscow 119991, Russia
2
Lebedev Physical Institute, Russian Academy of Sciences, Leninskii Av. 53, Moscow 119991, Russia
3
Kotelnikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Vvedenskogo Sq. 1, Fryazino 141190, Russia
4
Troitsk Institute for Innovation and Fusion Research, Pushkovykh Str. 12, Troitsk, Moscow 142190, Russia
5
Harbin Institute of Technology, 92 Xidazhi Str., Harbin 150001, China
*
Author to whom correspondence should be addressed.
Academic Editor: Yuri N. Palyanov
Received: 30 April 2017 / Revised: 29 May 2017 / Accepted: 31 May 2017 / Published: 6 June 2017
(This article belongs to the Special Issue Diamond Crystals)
View Full-Text   |   Download PDF [7399 KB, uploaded 6 June 2017]   |  

Abstract

Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is studied. A beveled SC diamond embraced with low-index {100}, {110}, {111}, {211}, and {311} faces was used as the substrate. Only the {100} face is found to sustain homoepitaxial growth at the present experimental parameters, while nanocrystalline diamond (NCD) films are produced on other planes. This observation is important for the choice of appropriate growth parameters, in particular, for the production of bi-layer or multilayer NCD-on-microcrystalline diamond (MCD) superhard coatings on tools when the deposition of continuous conformal NCD film on all facet is required. The development of the film morphology with growth time is examined with SEM. The structure of hillocks, with or without polycrystalline aggregates, that appear on {100} face is analyzed, and the stress field (up to 0.4 GPa) within the hillocks is evaluated based on high-resolution mapping of photoluminescence spectra of nitrogen-vacancy NV optical centers in the film. View Full-Text
Keywords: diamond; microwave plasma CVD; epitaxy; nanocrystalline film; photoluminescence; hillocks diamond; microwave plasma CVD; epitaxy; nanocrystalline film; photoluminescence; hillocks
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This is an open access article distributed under the Creative Commons Attribution License which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. (CC BY 4.0).

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MDPI and ACS Style

Ashkinazi, E.E.; Khmelnitskii, R.A.; Sedov, V.S.; Khomich, A.A.; Khomich, A.V.; Ralchenko, V.G. Morphology of Diamond Layers Grown on Different Facets of Single Crystal Diamond Substrates by a Microwave Plasma CVD in CH4-H2-N2 Gas Mixtures. Crystals 2017, 7, 166.

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